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Technische Information / technical information IGBT-Module IGBT-Modules FS15R06XL4 vorlaufige Daten preliminary data Hochstzulassige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Kollektor Dauergleichstrom DC collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt Verlustleistung total power dissipation Gate Emitter Spitzenspannung gate emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current Grenzlastintegral It value Isolations Prufspannung insulation test voltage tp= 1ms VR= 0V, tp= 10ms, Tvj= 125C RMS, f= 50Hz, t= 1min Tvj = 25 C TC = TC = 75 C 25 C 75 C VCES IC,nom. IC ICRM Ptot VGES IF IFRM It VISOL 600 15 20 30 V A A A tp= 1ms, TC = Tc= 25C, Transistor 81 W +20 V 15 A 30 A 34 As 2,5 kV Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sattigungsspannung collector emitter saturation voltage Gate Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor Emitter Reststrom collector emitter cut off current Gate Emitter Reststrom gate emitter leakage current VGE= 15V, Tvj= 25C, IC= IC,nom VGE= 15V, Tvj= 125C, IC= IC,nom VCE= VGE, Tvj= 25C, IC= VGE= -15V...+15V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V VCE = 600 V, VGE= 0V, Tvj= 25C 0,4 mA VCEsat VGE(th) QG Cies Cres ICES IGES min. 4,5 typ. 1,95 2,20 5,5 max. 2,55 6,5 V V V - 0,08 - C 0,675 nF 0,06 nF - - 5 mA VCE= 0V, VGE= 20V, Tvj= 25C - - 400 nA prepared by: P. Kanschat approved: M. Hierholzer date of publication: revision: 2.0 2002-12-17 1 (8) Technische Information / technical information IGBT-Module IGBT-Modules FS15R06XL4 vorlaufige Daten preliminary data Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Einschaltverzogerungszeit (induktive Last) turn on delay time (inductive load) IC= 15 A, VCC = 300 V 18 , Tvj= 25C 18 , Tvj= 125C 300 V 18 , Tvj= 25C 18 , Tvj= 125C 300 V 18 , Tvj= 25C 18 , Tvj= 125C 300 V 18 , Tvj= 25C 18 , Tvj= 125C 300 V Eon Eoff ISC LCE Tc= 25C RCC/EE tf 18 25 0,45 ns ns mJ td,off 80 110 ns ns tr 7 8 ns ns td,on 20 21 ns ns VGE = 15V, RG = VGE = 15V, RG = Anstiegszeit (induktive Last) rise time (inductive load) IC= 15 A, VCC = VGE = 15V, RG = VGE = 15V, RG = Abschaltverzogerungszeit (induktive Last) turn off delay time (inductive load) IC= 15 A, VCC = VGE = 15V, RG = VGE = 15V, RG = Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn on energy loss per pulse Ausschaltverlustenergie pro Puls turn off energy loss per pulse Kurzschlussverhalten SC data Modulinduktivitat stray inductance module Leitungswiderstand, Anschluss-Chip lead resistance, terminal-chip IC= 15 A, VCC = VGE = 15V, RG = VGE = 15V, RG = IC= IC= 15 A, VCC = A, VCC = min. typ. max. RG = 18 , Tvj = 125C, L = 15 nH 15 300 V RG = 18 , Tvj = 125C, L = 15 nH tP 10sec, VGE 15V, Tvj= 125C, VCC = 360 V, VCEmax=VCES -LCE *|di/dt| - 0,30 - mJ - 68 - A - 25 - nH - 8 - m Charakteristische Werte / characteristic values Diode Wechselrichter / diode inverter Durchlassspannung forward voltage Ruckstromspitze peak reverse recovery current IF = IF = IF = VR = VR = Sperrverzogerungsladung recovered charge IF = VR = VR = Ausschaltenergie pro Puls reverse recovery energy IF = VR = VR = 15 A, VGE= 0V, Tvj= 25C 15 A, VGE= 0V, Tvj= 125C 15 A, -diF/dt = 2000 A/s IRM Qr 36 37 A A 300 V, VGE= -10V, Tvj= 25C 300 V, VGE= -10V, Tvj= 125C 15 A, -diF/dt = 2000 A/s Erec 0,9 1,4 C C 300 V, VGE= -10V, Tvj= 25C 300 V, VGE= -10V, Tvj= 125C 15 A, -diF/dt = 2000 A/s 0,25 0,35 mJ mJ 300 V, VGE= -10V, Tvj= 25C 300 V, VGE= -10V, Tvj= 125C VF 1,4 1,35 2 V V 2 (8) Technische Information / technical information IGBT-Module IGBT-Modules FS15R06XL4 vorlaufige Daten preliminary data Charakteristische Werte / characteristic values NTC-Widerstand / NTC-thermistor Nennwiderstand rated resistance Abweichung von R100 deviation of R100 Verlustleistung power dissipation B-Wert B-value Tc= 25C Tc= 100C, R100= 493 Tc= 25C R2= R1 exp[B(1/T2 - 1/T1)] R25 R/R P25 B25/50 min. typ. 5 max. k -5 - 5 % - - 20 mW - 3375 - K Thermische Eigenschaften / thermal properties Innerer Warmewiderstand; DC thermal resistance, junction to case; DC Warmewiderstand; DC thermal resistance, junction to heatsink; DC Transistor Wechselr. / transistor inverter Diode Wechselrichter / diode inverter Transistor Wechselr. / transistor inverter Diode Wechselrichter / diode inverter Paste = 1 W/m*K / grease = 1 W/m*K Ubergangs-Warmewiderstand, DC thermal resistance, case to heatsink, DC Transistor Wechselr. / transistor inverter Diode Wechselrichter / diode inverter Paste = 1 W/m*K / grease = 1 W/m*K Hochstzulassige Sperrschichttemp. maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Tvjmax Top Tstg 150 C RthCH 0,65 0,85 K/W K/W RthJH RthJC 1,90 3,20 1,55 2,70 K/W K/W K/W K/W -40 - 125 C -40 - 125 C Mechanische Eigenschaften / mechanical properties Innere Isolation internal insulation CTI comperative tracking index Anpresskraft pro Feder mounting force per clamp Gewicht weight Kriechstrecke creepage distance Anschluss - Kuhlkorper terminal to heatsink Anschluss - Anschluss terminal to terminal Luftstrecke clearance distance Anschluss - Kuhlkorper terminal to heatsink Anschluss - Anschluss terminal to terminal F Al2O3 225 20..50 N G 25 g 10,5 mm 5 mm 9 mm 5 mm 3 (8) Technische Information / technical information IGBT-Module IGBT-Modules FS15R06XL4 vorlaufige Daten preliminary data Ausgangskennlinie (typisch) output characteristic (typical) 30 Tvj = 25C Tvj = 125C IC= f(VCE) VGE= 15V 20 IC [A] 10 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VCE [V] Ausgangskennlinienfeld (typisch) output characteristic (typical) 30 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V IC= f(VCE) Tvj= 125C 20 IC [A] VGE = 8V 10 0 0,0 0,5 1,0 1,5 2,0 2,5 VCE [V] 3,0 3,5 4,0 4,5 5,0 4 (8) Technische Information / technical information IGBT-Module IGBT-Modules FS15R06XL4 vorlaufige Daten preliminary data Ubertragungscharakteristik (typisch) transfer characteristic (typical) 30 IC= f(VGE) VCE= 20V Tvj = 25C Tvj = 125C 20 IC [A] 10 0 5 6 7 8 9 VGE [V] 10 11 12 13 Durchlasskennlinie der Inversdiode (typisch) forward characteristic of inverse diode (typical) 30 Tvj = 25C Tvj = 125C IF= f(VF) 20 IF [A] 10 0 0,0 0,2 0,4 0,6 0,8 1,0 VF [V] 1,2 1,4 1,6 1,8 5 (8) Technische Information / technical information IGBT-Module IGBT-Modules FS15R06XL4 vorlaufige Daten preliminary data Schaltverluste (typisch) switching losses (typical) Eon Eoff Erec Eon = f(IC), Eoff = f(IC), Erec = f(IC) VGE= 15V, RGon=RGoff= 18, VCE= 300V, Tvj= 125C 1,5 E [mJ] 1 0,5 0 0 5 10 15 IC [A] 20 25 30 Schaltverluste (typisch) switching losses (typical) Eon Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE= 15V, IC= 15A, VCE= 300V, Tvj= 125C 1,2 1 0,8 E [mJ] 0,6 0,4 0,2 0 0 20 Eoff Erec 40 60 80 100 RG [] 120 140 160 180 6 (8) Technische Information / technical information IGBT-Module IGBT-Modules FS15R06XL4 vorlaufige Daten preliminary data Transienter Warmewiderstand transient thermal impedance 10,00 ZthJH = f (t) ZthJH(K/W) 1,00 Zth:IGBT Zth:Diode 0,10 0,001 0,01 0,1 t (s) 1 10 i ri [K/kW]: IGBT i [s]: IGBT ri [K/kW]: Diode i [s]: Diode 1 114,0 0,000379 192,0 0,00031 2 380,0 0,00745 640,0 0,00484 3 1064,0 0,11319 1792,0 0,10644 4 342,0 0,16026 576,0 0,14203 Sicherer Arbeitsbereich (RBSOA) reverse bias safe operation area (RBSOA) 40 IC, Chip IC, Modul VGE=15V, Tj=125C, RG = 18 30 IC [A] 20 10 0 0 200 400 VCE [V] 600 7 (8) Technische Information / technical information IGBT-Module IGBT-Modules FS15R06XL4 vorlaufige Daten preliminary data Schaltbild circuit diagram Gehausemae package outline Bohrplan drilling layout Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes. 8 (8) Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact". |
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